Amorphous SICX:H and SICXNY:H films obtained from hexamethyldisilane vapor in inductively coupled RF discharge plasma

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Аннотация

Amorphous films of hydrogenated silicon carbide SiCx:H and carbonitride SiCxNy:H have been synthesized in an RF inductively coupled plasma reactor using hexamethyldisilane vapor and additional argon and/or nitrogen gases. The deposition process was carried out at temperatures of 50–400°C and plasma powers of 100–400 W. The dependences of the growth rate, chemical composition and structure of films, light transmittance, refractive index, and optical band gap on synthesis conditions have been obtained. An in situ study of the gas phase composition was performed using optical emission spectroscopy.

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Авторлар туралы

M. Chagin

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences

Email: marina@niic.nsc.ru
Ресей, Novosibirsk

E. Ermakova

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences

Email: marina@niic.nsc.ru
Ресей, Novosibirsk

V. Shayapov

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences

Email: marina@niic.nsc.ru
Ресей, Novosibirsk

V. Sulyaeva

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences

Email: marina@niic.nsc.ru
Ресей, Novosibirsk

E. Maksimovskii

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences

Email: marina@niic.nsc.ru
Ресей, Novosibirsk

I. Yushina

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences

Email: marina@niic.nsc.ru
Ресей, Novosibirsk

M. Kosinova

Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: marina@niic.nsc.ru
Ресей, Novosibirsk

Әдебиет тізімі

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2. Fig. 1. Emission spectra of ICP plasma (P = 400 W) of GDS+Ar(a) and GMS+Ar+N2 mixtures at F(N2)/[F(N2)+F(Ar)] = 0.5 (b).

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3. Fig. 2. Dependences of the emission intensity of the CN band (a) and the Hß line (b) on the RF discharge power for mixtures of GMDS + Ar (squares), GMDS + Ar + N2 (circles), GMDS + N2 (triangles).

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4. 3. Dependences of the emission intensity of the Si line (a) and the C2 band (b) on the RF discharge power for mixtures of GDS + Ar (squares), GMS + Ar + N2 (circles), GMDS + N2 (triangles).

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5. 4. The dependence of the elemental composition of films on (a) the deposition temperature, (b) the plasma power, and (c) the nitrogen content in the initial gas mixture GMDS + Ar + N2.

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6. Fig. 5. Evolution of IR spectra of Siox films:H when (a) the synthesis temperature and (b) the plasma power change.

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