| Issue |
Title |
File |
| Vol 53, No 6 (2024) |
III-nitride HEMT Heterostructures with an Ultrathin AlN Barrier: Fabrication and Experimental Application |
(Rus)
|
|
Gusev A.S., Sultanov A.O., Ryzhuk R.V., Nevolina T.N., Tsunvaza D., Safaraliev G.K., Kargin N.I.
|
| Vol 53, No 6 (2024) |
Tunnel Breakdown Bipolar Transistor |
(Rus)
|
|
Rekhviashvili S.S., Gaev D.S.
|
| Vol 53, No 5 (2024) |
Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor |
(Rus)
|
|
Novoselov А.S., Gusev М.R., Masalsky N.V.
|
| Vol 53, No 3 (2024) |
Development of the Ge-MDST instrument structure with an induced p-type channel |
(Rus)
|
|
Alyabina N.A., Arkhipova E.A., Buzynin Y.N., Denisov S.A., Zdoroveishchev A.V., Titova A.M., Chalkov V.Y., Shengurov V.G.
|
| Vol 53, No 3 (2024) |
Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier |
(Rus)
|
|
Gusev A.S., Sultanov A.O., Katkov A.V., Ryndya S.M., Siglovaya N.V., Klochkov A.N., Ryzhuk R.V., Kargin N.I., Borisenko D.P.
|
| Vol 53, No 3 (2024) |
The Effect оf Laser Radiation оn Functional Properties of MOS Structures |
(Rus)
|
|
Rekhviashvili S.S., Gaev D.S.
|
| Vol 53, No 1 (2024) |
Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter |
(Rus)
|
|
Golikov O.L., Zabavichev I.Y., Ivanov A.S., Obolensky S.V., Obolenskaya E.S., Paveliev D.G., Potekhin A.A., Puzanov A.S., Tarasova E.A., Khazanova S.V.
|
| Vol 53, No 1 (2024) |
Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems |
(Rus)
|
|
Polyakova V.V., Saenko A.V., Kots I.N., Kovalev A.V.
|
| Vol 52, No 6 (2023) |
Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta |
(Rus)
|
|
Kovalchuk N.S., Lastovsky S.B., Odzhaev V.B., Petlitsky A.N., Prosolovich V.S., Shestovsky D.V., Yavid V.Y., Yankovsky Y.N.
|
| Vol 52, No 6 (2023) |
OPTICALLY PUMPED BIPOLAR TRANSISTOR |
(Rus)
|
|
Altudov Y.K., Gaev D.S., Pskhu A.V., Rekhviashvili S.S.
|
| Vol 52, No 6 (2023) |
Prototypes of devices for heterogeneous hybrid semiconductor electronics with an embedded biomolecular domain |
(Rus)
|
|
Baranov M.A., Karseeva E.K., Tsybin O.Y.
|
| Vol 52, No 6 (2023) |
Design of integrated voltage multipliers using standard CMOS technologies |
(Rus)
|
|
Sinyukin A.S., Konoplev B.G., Kovalev A.V.
|
| Vol 52, No 5 (2023) |
Neuromorphic Systems: Devices, Architecture, and Algorithms |
(Rus)
|
|
Fetisenkova K.A., Rogozhin A.E.
|
| Vol 52, No 5 (2023) |
Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region |
(Rus)
|
|
Novoselov A.S., Masalskii N.V.
|
| Vol 52, No 4 (2023) |
Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes |
(Rus)
|
|
Koval’chuk N.S., Lastovskii S.B., Odzhaev V.B., Petlitskii A.N., Prosolovich V.S., Shestovsky D.V., Yavid V.Y., Yankovskii Y.N.
|
| Vol 52, No 4 (2023) |
Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films |
(Rus)
|
|
Tulina N.A., Rossolenko A.N., Borisenko I.Y., Ivanov A.A.
|
| Vol 52, No 2 (2023) |
Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |
(Rus)
|
|
Isaev A.G., Permyakova O.O., Rogozhin A.E.
|
| Vol 52, No 1 (2023) |
Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact |
(Rus)
|
|
Kerimov E.A.
|
| Vol 52, No 1 (2023) |
Контактно-транспортные и автоэмиссионные свойства низкоразмерных 2D углеродных гетероструктур |
(Rus)
|
|
Яфаров Р., Шабунин Н.
|
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