| 期 |
标题 |
文件 |
| 卷 53, 编号 6 (2024) |
III-nitride HEMT Heterostructures with an Ultrathin AlN Barrier: Fabrication and Experimental Application |
(Rus)
|
|
Gusev A., Sultanov A., Ryzhuk R., Nevolina T., Tsunvaza D., Safaraliev G., Kargin N.
|
| 卷 53, 编号 6 (2024) |
Tunnel Breakdown Bipolar Transistor |
(Rus)
|
|
Rekhviashvili S., Gaev D.
|
| 卷 53, 编号 5 (2024) |
Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor |
(Rus)
|
|
Novoselov А., Gusev М., Masalsky N.
|
| 卷 53, 编号 3 (2024) |
Development of the Ge-MDST instrument structure with an induced p-type channel |
(Rus)
|
|
Alyabina N., Arkhipova E., Buzynin Y., Denisov S., Zdoroveishchev A., Titova A., Chalkov V., Shengurov V.
|
| 卷 53, 编号 3 (2024) |
Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier |
(Rus)
|
|
Gusev A., Sultanov A., Katkov A., Ryndya S., Siglovaya N., Klochkov A., Ryzhuk R., Kargin N., Borisenko D.
|
| 卷 53, 编号 3 (2024) |
The Effect оf Laser Radiation оn Functional Properties of MOS Structures |
(Rus)
|
|
Rekhviashvili S., Gaev D.
|
| 卷 53, 编号 1 (2024) |
Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter |
(Rus)
|
|
Golikov O., Zabavichev I., Ivanov A., Obolensky S., Obolenskaya E., Paveliev D., Potekhin A., Puzanov A., Tarasova E., Khazanova S.
|
| 卷 53, 编号 1 (2024) |
Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems |
(Rus)
|
|
Polyakova V., Saenko A., Kots I., Kovalev A.
|
| 卷 52, 编号 6 (2023) |
Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta |
(Rus)
|
|
Kovalchuk N., Lastovsky S., Odzhaev V., Petlitsky A., Prosolovich V., Shestovsky D., Yavid V., Yankovsky Y.
|
| 卷 52, 编号 6 (2023) |
OPTICALLY PUMPED BIPOLAR TRANSISTOR |
(Rus)
|
|
Altudov Y., Gaev D., Pskhu A., Rekhviashvili S.
|
| 卷 52, 编号 6 (2023) |
Prototypes of devices for heterogeneous hybrid semiconductor electronics with an embedded biomolecular domain |
(Rus)
|
|
Baranov M., Karseeva E., Tsybin O.
|
| 卷 52, 编号 6 (2023) |
Design of integrated voltage multipliers using standard CMOS technologies |
(Rus)
|
|
Sinyukin A., Konoplev B., Kovalev A.
|
| 卷 52, 编号 5 (2023) |
Neuromorphic Systems: Devices, Architecture, and Algorithms |
(Rus)
|
|
Fetisenkova K., Rogozhin A.
|
| 卷 52, 编号 5 (2023) |
Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region |
(Rus)
|
|
Novoselov A., Masalskii N.
|
| 卷 52, 编号 4 (2023) |
Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes |
(Rus)
|
|
Koval’chuk N., Lastovskii S., Odzhaev V., Petlitskii A., Prosolovich V., Shestovsky D., Yavid V., Yankovskii Y.
|
| 卷 52, 编号 4 (2023) |
Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films |
(Rus)
|
|
Tulina N., Rossolenko A., Borisenko I., Ivanov A.
|
| 卷 52, 编号 2 (2023) |
Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |
(Rus)
|
|
Isaev A., Permyakova O., Rogozhin A.
|
| 卷 52, 编号 1 (2023) |
Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact |
(Rus)
|
|
Kerimov E.
|
| 卷 52, 编号 1 (2023) |
Контактно-транспортные и автоэмиссионные свойства низкоразмерных 2D углеродных гетероструктур |
(Rus)
|
|
Яфаров Р., Шабунин Н.
|
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