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卷 53, 编号 6 (2024) III-nitride HEMT Heterostructures with an Ultrathin AlN Barrier: Fabrication and Experimental Application PDF
(Rus)
Gusev A., Sultanov A., Ryzhuk R., Nevolina T., Tsunvaza D., Safaraliev G., Kargin N.
卷 53, 编号 6 (2024) Tunnel Breakdown Bipolar Transistor PDF
(Rus)
Rekhviashvili S., Gaev D.
卷 53, 编号 5 (2024) Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor PDF
(Rus)
Novoselov А., Gusev М., Masalsky N.
卷 53, 编号 3 (2024) Development of the Ge-MDST instrument structure with an induced p-type channel PDF
(Rus)
Alyabina N., Arkhipova E., Buzynin Y., Denisov S., Zdoroveishchev A., Titova A., Chalkov V., Shengurov V.
卷 53, 编号 3 (2024) Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier PDF
(Rus)
Gusev A., Sultanov A., Katkov A., Ryndya S., Siglovaya N., Klochkov A., Ryzhuk R., Kargin N., Borisenko D.
卷 53, 编号 3 (2024) The Effect оf Laser Radiation оn Functional Properties of MOS Structures PDF
(Rus)
Rekhviashvili S., Gaev D.
卷 53, 编号 1 (2024) Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter PDF
(Rus)
Golikov O., Zabavichev I., Ivanov A., Obolensky S., Obolenskaya E., Paveliev D., Potekhin A., Puzanov A., Tarasova E., Khazanova S.
卷 53, 编号 1 (2024) Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems PDF
(Rus)
Polyakova V., Saenko A., Kots I., Kovalev A.
卷 52, 编号 6 (2023) Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta PDF
(Rus)
Kovalchuk N., Lastovsky S., Odzhaev V., Petlitsky A., Prosolovich V., Shestovsky D., Yavid V., Yankovsky Y.
卷 52, 编号 6 (2023) OPTICALLY PUMPED BIPOLAR TRANSISTOR PDF
(Rus)
Altudov Y., Gaev D., Pskhu A., Rekhviashvili S.
卷 52, 编号 6 (2023) Prototypes of devices for heterogeneous hybrid semiconductor electronics with an embedded biomolecular domain PDF
(Rus)
Baranov M., Karseeva E., Tsybin O.
卷 52, 编号 6 (2023) Design of integrated voltage multipliers using standard CMOS technologies PDF
(Rus)
Sinyukin A., Konoplev B., Kovalev A.
卷 52, 编号 5 (2023) Neuromorphic Systems: Devices, Architecture, and Algorithms PDF
(Rus)
Fetisenkova K., Rogozhin A.
卷 52, 编号 5 (2023) Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region PDF
(Rus)
Novoselov A., Masalskii N.
卷 52, 编号 4 (2023) Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes PDF
(Rus)
Koval’chuk N., Lastovskii S., Odzhaev V., Petlitskii A., Prosolovich V., Shestovsky D., Yavid V., Yankovskii Y.
卷 52, 编号 4 (2023) Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films PDF
(Rus)
Tulina N., Rossolenko A., Borisenko I., Ivanov A.
卷 52, 编号 2 (2023) Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures PDF
(Rus)
Isaev A., Permyakova O., Rogozhin A.
卷 52, 编号 1 (2023) Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact PDF
(Rus)
Kerimov E.
卷 52, 编号 1 (2023) Контактно-транспортные и автоэмиссионные свойства низкоразмерных 2D углеродных гетероструктур PDF
(Rus)
Яфаров Р., Шабунин Н.
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