НАДЕЖНОСТЬ
| Шығарылым | Атауы | Файл | |
| Том 52, № 4 (2023) | Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation |
 (Rus) |
|
| Glushko A., Morozov S., Chistyakov M. | |||
| Том 52, № 4 (2023) | Single Event Displacement Effects in a VLSI |
(Rus) |
|
| Chumakov A. | |||
| Нәтижелер 2 - 1/2 | |||