Evaluation of the component composition and thickness of the modified layer of tungsten and tantalum carbides during stationary sputtering by helium ions bombardment

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A method is proposed for calculating the component composition and thickness of a layer of two-component targets changed as a result of prolonged (stoichiometric) sputtering when irradiated with light ions. The method is based on a previously tested model of sputtering inhomogeneous two-component materials with light ions. In the case of stationary sputtering of tungsten and tantalum carbides with helium ions, the results of calculations of the component composition and thickness of the modified layer are presented in comparison with experimental data.

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V. Manukhin

National Research University “MPEI”

编辑信件的主要联系方式.
Email: manukhinvv@mpei.ru
俄罗斯联邦, Moscow, 111250

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2. Fig. 1. Total WC sputtering coefficients depending on the energy of helium ions (normal incidence), calculation: solid line – stoichiometric sputtering of the modified layer; dashed line – without formation of the modified layer; symbols – experiment [21].

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3. Fig. 2. Total sputtering coefficients of TaC depending on the energy of helium ions (normal incidence), calculation: solid line – stoichiometric sputtering of the modified layer; dashed line – without formation of the modified layer; symbols – experiment [21].

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4. Fig. 3. Calculation of the thickness of the modified layer during stoichiometric sputtering of WC with helium ions depending on the ion energy (normal incidence).

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5. Fig. 4. Dependence of the thickness of the modified layer on the energy of helium ions (normal incidence) during stoichiometric sputtering of TaC: solid line – calculation; symbols – experiment [22].

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6. Рис. 5. Результаты расчетов относительной концентрации вольфрама в измененном слое при стехиометрическом распылении WC ионами He в зависимости от энергии ионов (падение под углом 30°): сплошная линия — расчет; □ — данные компьютерного моделирования [24]; ● — эксперимент [23].

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7. Fig. 6. Results of calculations of the relative concentration of tantalum in the modified layer during stationary sputtering of TaC with He ions depending on the ion energy (normal incidence): solid line – calculation; symbols – experiment [22].

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