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Effect of radiation-induced defects in gallium and nitrogen lattices on n-GaN conductivity compensation
Kozlovski V.V., Vasil’ev А.E., Lebedev А.А., Zhurkin Е.Е., Левинштейн М.Е., Strelchuk А.М., Malevsky D.А., Sakharov А.V., Nikolaev А.Е.
Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga2O3, GaN) under Proton Irradiation
Kozlovski V.V., Vasil’ev A.E., Lebedev A.A., Zhurkin E.E., Levinshtein M.E., Strelchuk A.M.
Change in the Charge State of MOS Structures with a Radiation-Induced Charge under High-Field Injection of Electrons
Andreev D.V., Bondarenko G.G., Andreev V.V.
Accumulation and Erase of Radiation-Induced Charge in MOS Structures
Andreev D.V.
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