Wave-like periodic structures on the silicon surface initiated by irradiation with a focused gallium ion beam

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Аннотация

The processes of microrelief formation on the Si(100) surface under irradiation with a 30 keV Ga+ ion beam and a fluence of D = 1.25 × 1018–2 × 1019 cm–2 at incidence angles θ = 30°–85° was investigated. It was found that in the θ angular range 40°–70° faceted ripples were formed on the Si surface, and at θ = 30° sinusoidal ripples were formed. The experimental dependence of the wavelength of the periodic structure on the irradiation time λ(t) ~ tn, n = 0.33–0.35, was obtained. The average velocities of relief propagation and their direction relative to the direction of incident ions in the cases of θ = 30° and 40° were determined, which were –5.3 ± 0.6 and –6.3 ± 0.6 nm/s, respectively. The results obtained are discussed in detail within the framework of existing models of the formation of ripples on a surface under ion beam irradiation.

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Авторлар туралы

V. Bachurin

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

 Yaroslavl Branch

Ресей, Yaroslavl

M. Smirnova

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

 Yaroslavl Branch

Ресей, Yaroslavl

K. Lobzov

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

Yaroslavl Branch

Ресей, Yaroslavl

M. Lebedev

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

Yaroslavl Branch

Ресей, Yaroslavl

L. Mazaletsky

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

 Yaroslavl Branch

Ресей, Yaroslavl

D. Pukhov

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

Yaroslavl Branch

Ресей, Yaroslavl

A. Churilov

Valiev Institute of Physics and Technology of the RAS

Хат алмасуға жауапты Автор.
Email: vibachurin@mail.ru

Yaroslavl Branch

Ресей, Yaroslavl

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Жүктеу
2. Fig. 1. Dependences of the curvature coefficients Sx (1) and Sy (2) on the angle of incidence of the ion beam, calculated using the “crater function” model with the SDTrimSP program.

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3. Fig. 2. SEM images of the Si surface at different angles of incidence of the Ga+ ion beam: a, b — 40°; c, d — 50°; d, f — 60°. D = 3.75 × 1018 cm–2 (a, c, d) and 6.25 × 1018 cm–2 (b, d, f).

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4. Fig. 3. Enlarged fragment of the Si surface relief formed as a result of irradiation with a beam of Ga+ ions at θ = 50° and D = 1019 cm–2.

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5. Fig. 4. SEM images of cross sections of Si samples obtained as a result of irradiation with a beam of Ga+ ions at θ = 30°, D = 2.5 × 1018 cm–2 (a) and θ = 50°, D = 6.25 × 1018 cm–2 (b).

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6. Fig. 5. Experimental dependences of the relief wavelength on the irradiation time at θ = 30° (empty symbols) and 40° (filled symbols). The dashed and dash-dotted lines, respectively, show the approximations by the power dependences λ ~ tn, where n = 0.33, 0.35.

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7. Fig. 6. SEM images of fragments of the Si surface irradiated with Ga+ ions at θ = 30° (a) and 40° (b). The images were obtained in situ on a Quanta 200i dual-beam setup. The white dots mark the positions of individual wave sections at each stage of irradiation. With a successive increase in t, their shift in the direction opposite to the direction of incidence of the ion beam is observed.

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8. Fig. 7. STEM images of the near-surface regions of Si after irradiation with Ga+ ions with an energy of 30 keV at θ = 30° (a) and 40° (b), D = 1017 cm–2.

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9. Fig. 8. Schematic representation of the process of nucleation of a wave-like relief at the edge of a sputtering crater during irradiation of the Si surface with a beam of Ga+ ions in the case of θ > 40°.

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