Features of the formation of layers on the surface of valve metals in the process of ion beam assisted deposition of metals from vacuum arc discharge plasma

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Layers on the surface of aluminum, aluminum alloy, titanium and tantalum was formed by ion beam assisted deposition of metals. Formation of layers in ion beam assisted deposition mode, by means of the deposition of metal and mixing of precipitating layer with the substrate by accelerated (U = 20 kV) ions of the same metal from metal vapor and ionized plasma of vacuum (~10– 2 Pa) pulsed electric arc discharge, was carried out. Multicomponent amorphous layers containing atoms of the deposited metal, components of the substrate material, including oxygen of the surface oxide film, as well as hydrocarbon molecules as impurities were obtained. It is established that during ion beam assisted deposition of metals with getter properties (Zr, Cr, Er, Dy, etc.) on the surface of the studied materials, significant amounts of gases are captured from the residual atmosphere of the vacuum working chamber and are included in the composition of the formed layer. At the same time, the content of atoms of the substrate material in the layer is small. With ion beam assisted deposition of metals that do not exhibit getter properties, the content of impurities in the resulting layers is significantly less, their composition contains atoms of the deposited metal and the substrate material.

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Sobre autores

V. Poplavsky

Belarusian State Technological University

Autor responsável pela correspondência
Email: vasily.poplav@tut.by
Belarus, Minsk, 220006

A. Babrovich

Belarusian State Technological University

Email: vasily.poplav@tut.by
Belarus, Minsk, 220006

A. Dorozhko

Belarusian State Technological University

Email: vasily.poplav@tut.by
Belarus, Minsk, 220006

V. Matys

Belarusian State Technological University

Email: vasily.poplav@tut.by
Belarus, Minsk, 220006

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2. Fig. 1. Image of a section of the surface of a sample of titanium alloy VT1-0 with a surface layer obtained in the process of ion-assisted deposition of chromium.

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3. Fig. 2. Distribution of titanium, oxygen and chromium (a) along the scanning line (b) of the surface of a sample of VT1-0 alloy with a layer formed in the process of ion-assisted deposition of chromium (according to energy dispersive analysis data, excluding carbon).

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4. Fig. 3. Rutherford backscattering spectra of 4He ions on the nuclei of atoms of elements included in the layers formed on the surface of aluminum A7 (Zr/A7) and aluminum alloy D16T (Zr/D16T and Cr/D16T) in the process of ion-assisted deposition of zirconium and chromium. E0 = 1.3 MeV.

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5. Fig. 4. Rutherford backscattering spectra of 4He ions on the nuclei of atoms of elements included in the layers formed on the surface of samples of titanium alloy VT1-0 with layers obtained in the process of ion-assisted deposition of platinum (Pt/Ti) and chromium (Cr/Ti). E0 = 1.0 MeV.

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6. Fig. 5. A section of the Rutherford backscattering spectrum of 4He ions on the nuclei of titanium and chromium atoms included in the layer formed on the VT1-0 titanium alloy during ion-assisted deposition of chromium, in comparison with the spectrum obtained using modeling taking into account the presence of the following elements in the layer: Cr, Ti, O, C, H. E0 = 1.0 MeV.

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7. Fig. 6. Rutherford backscattering spectra of 4He ions on the nuclei of atoms of elements included in the layers formed on the tantalum surface during ion-assisted deposition of platinum (Pt/Ta), erbium and platinum (Er, Pt/Ta), dysprosium and platinum (Dy, Pt/Ta), holmium and platinum (Ho, Pt/Ta). E0 = 1.0 MeV.

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8. Fig. 7. Section of the model spectrum of Rutherford backscattering of 4He ions on nuclei of dysprosium, platinum and tantalum atoms, which are part of the layer formed on the surface of tantalum in the process of alternate ion-assisted deposition of dysprosium and platinum, obtained taking into account the presence of the following elements in the layer: Dy, Ta, Pt, O, C, H. E0 = 1.0 MeV.

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