Influence of Aluminium on the Structure and Electrical Properties of Amorphous Diamond-Like Silicon-Carbon Films

封面

如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

This article studies the influence of aluminium, a weak-carbide-forming metal, on phase composition, structure, and electro physical properties of amorphous diamond-like silicon-carbon films. The results of this study are compared with the influence on the same characteristics of strong-carbide-forming transition metals – titanium and hafnium. It is shown that the effects of aluminium and transition metals on the structure and properties of silicon-carbon films are fundamentally different. The addition of aluminium in a wide range of concentrations, in contrast to transition metals, does not lead to formation of a nano-crystalline phase in the films. The dependence of electrical conductivity on the aluminium concentration is smooth and monotonic, but in the case of transition metals, it has a pronounced percolation form. In addition, the absolute values of changes in electrical conductivity differ by orders of magnitude. The performed studies allowed us to conclude that the reasons for these differences are due to the interaction of metals with different chemical elements of the film. Transition metal atoms interact mainly with carbon atoms to form nanocrystals of highly conductive carbides. In contrast, aluminium atoms mainly interact with oxygen atoms and form an amorphous phase of aluminium oxide.

作者简介

A. Popov

National Research University “Moscow Power Engineering Institute”; Institute of Nanotechnology of Microelectronics RAS

编辑信件的主要联系方式.
Email: popovai2009@gmail.com
Russia, 111250, Moscow; Russia, 119991, Moscow

M. Presnyakov

National Research Center “Kurchatov Institute”

Email: barinovad@mpei.ru
Russia, 123182, Moscow

E. Domashevskaya

Voronezh State University

Email: barinovad@mpei.ru
Russia, 394006, Voronezh

V. Terekhov

Voronezh State University

Email: barinovad@mpei.ru
Russia, 394006, Voronezh

M. Semenov-Shefov

National Research University “Moscow Power Engineering Institute”

Email: barinovad@mpei.ru
Russia, 111250, Moscow

V. Afanas’ev

National Research University “Moscow Power Engineering Institute”

Email: barinovad@mpei.ru
Russia, 111250, Moscow

T. Chukanova

National Research University “Moscow Power Engineering Institute”

Email: barinovad@mpei.ru
Russia, 111250, Moscow

D. Zezin

National Research University “Moscow Power Engineering Institute”; Institute of Nanotechnology of Microelectronics RAS

Email: barinovad@mpei.ru
Russia, 111250, Moscow; Russia, 119991, Moscow

V. Yemets

National Research University “Moscow Power Engineering Institute”

Email: barinovad@mpei.ru
Russia, 111250, Moscow

A. Barinov

National Research University “Moscow Power Engineering Institute”; Institute of Nanotechnology of Microelectronics RAS

编辑信件的主要联系方式.
Email: barinovad@mpei.ru
Russia, 111250, Moscow; Russia, 119991, Moscow

M. Shapetina

Moscow State Pedagogical University

Email: barinovad@mpei.ru
Russia, 119991, Moscow

参考

  1. Meškinis Š., Tamulevičien’e A. // Mater. Sci. 2011. V. 17. № 4. P. 358. https://doi.org/10.5755/j01.ms.17.4.770
  2. Vencatraman C., Goel A., Lei R., Kester D., Outten C. // Thin Solid Films. 1997. V. 308–309. P. 173. https://doi.org/10.1016/S0040-6090(97)00384-2
  3. Mangolini F., Krick B.A., Jacobs T.D.B., Khanal S.R., Streller F., McClimon J.B., Hilbert J., Prasad S.V., Scharf T.W., Ohlhausen J.A., Lukes J.R., Sawyer W.G., Carpick R.W. // Carbon. 2018. V. 130. P. 127. https://doi.org/10.1016/j.carbon.2017.12.096
  4. Zavedeev E.V., Zilova O.S., Shupegin M.L., Barinov A.D., Arutyunyan N.R., Roch T., Pimenov S.M. // Appl. Phys. A. 2016. V. 122. P. 961. https://doi.org/10.1007/s00339-016-0508-7
  5. Bociaga D., Sobczyk-Guzenda A., Szymanski W., Jedrzejczak A., Jastrzebska A., Olejnik A., Swiatek L., Jastrzebski K. // Vacuum. 2017. V. 143. P. 395. https://doi.org/10.1016/j.vacuum.2017.06.027
  6. Величко М.А., Гладких Ю.П. // Науч. ведомости Белгородского НИУ: Сер. Математика. Физика. 2016. № 6 (227). Вып. 42. С. 115.
  7. Barinov A.D., Popov A.I., Presnyakov M.Yu. // Inorg. Mater. 2017. V. 53. № 7. P. 690. https://doi.org/10.1134/S0020168517070019
  8. Popov A.I., Barinov A.D., Presniakov M.Y. // J. Nanoelectronics Optoelectronics. 2015. V. 9. № 6. P. 787. https://doi.org/10.1166/jno.2014.1678
  9. Frolov V.D., Pimenov S.M., Zavedeev E.V., Konov V.I., Lubnin E.N., Kirpienko G.G. // J. Surf. Invest. X-ray, Synchrotron Neutron Tech. 2007. V. 1. № 3. P. 3203. https://doi.org/10.1134/S1027451007030135
  10. Шупегин М.Л. // Заводская лаборатория. Диагностика материалов. 2013. Т. 79. № 2. С. 28.
  11. Белогорохов А.И., Додонов А.М., Малинкович М.Д., Пархоменко Ю.Н., Смирнов А.П., Шупегин М.Л. // Известия вузов. Материалы электронной техники. 2007. № 1. С. 69.
  12. Попов А.И., Баринов А.Д., Емец В.М., Кастро Арта Р.А., Колобов А.В., Кононов А.А., Овчаров А.В., Чуканова Т.С. // ФТТ. 2021. Т. 63. № 11. С. 1844.
  13. Пресняков М.Ю., Попов А.И., Усольцева Д.С., Шупегин М.Л., Васильев А.Л. // Российские нанотехнологии. 2014. Т. 9. № 7–8. С. 59. https://doi.org/10.1134/S1995078014050139
  14. Naumkin A.V., Kraut-Vass A., Gaarenstroom S.W., Powell C.J. // NIST X-ray Photoelectron Spectroscopy Database. Version 4.1. 2012. https://doi.org/10.18434/T4T88K
  15. Попов А.И., Афанасьев В.П., Баринов А.Д., Бодиско Ю.Н., Грязев А.С., Мирошникова И.Н., Пресняков М.Ю., Шупегин М.Л. // Поверхность. Рентген., синхротр. и нейтрон. исслед. 2019. № 9. С. 49. https://doi.org/10.1134/S0207352819090129
  16. Jansson U., Lewin E. // Thin Solid Films. 2013. V. 536. P. 1. https://doi.org/10.1016/J.TSF.2013.02.019
  17. Bouabibsa I., Lamri S., Sanchette F. // Coatings. 2018. V. 8. Iss. 10. P. 370. https://doi.org/10.3390/coatings8100370
  18. Попов А.И., Баринов А.Д., Емец В.М., Чуканова Т.С., Шупегин М.Л. // ФТТ. 2020. Т. 62. Вып. 10. С. 1612.
  19. Popov A. Disordered Semiconductors: Physics and Applications (2nd Edition). Pan Stanford Publishing, 2018. 330 p. https://doi.org/10.1201/b22346
  20. Борисова Т.М., Кастро Р.А. // Труды МФТИ. 2013. Т. 5. № 1. С. 21.

补充文件

附件文件
动作
1. JATS XML
2.

下载 (77KB)
3.

下载 (1MB)
4.

下载 (216KB)
5.

下载 (249KB)
6.

下载 (402KB)
7.

下载 (81KB)
8.

下载 (90KB)

版权所有 © А.И. Попов, А.Д. Баринов, В.М. Емец, Д.А. Зезин, Т.С. Чуканова, В.П. Афанасьев, М.А. Семенов-Шефов, В.А. Терехов, Э.П. Домашевская, М.Ю. Пресняков, М.А. Шапетина, 2023